smd type mosfet 1 www.kexin.com.cn 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source mos field effect transistor 2SK3480 features super low on-state resistance: r ds(on)1 =31m max. (v gs =10v,i d = 25a) r ds(on)2 =36m max. (v gs =4.5v,i d =25a) low c iss: c iss = 3600 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 50 a i dp * 100 a power dissipation t c =25 84 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =25a 17 34 s r ds(on)1 v gs =10v,i d =25a 25 31 m r ds(on)2 v gs =4.5v,i d =25a 27 36 m input capacitance c iss 3600 pf output capacitance c oss 360 pf reverse transfer capacitance c rss 190 pf turn-on delay time t on 15 ns rise time t r 11 ns turn-off delay time t off 68 ns fall time tf 6.0 ns total gate charge q g 74 nc gate to source charge q gs 10 nc gate to drain charge q gd 20 nc v ds =10v,v gs =0,f=1mhz i d =25a,v gs(on) =10v,r g =0 ,v dd =50v i d =50a, v dd =80v, v gs =10v draintosourceon-stateresistance
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